advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 1 dc - 12 ghz discrete power phemt TGF2021-08 key features and performance ? frequency range: dc - 12 ghz ? > 39 dbm nominal psat ? 59% maximum pae ? 11 db nominal power gain ? suitable for high reliability applications ?8mm x 0.35 m power phemt ? nominal bias vd = 8-12v, idq = 600-1000ma (u nder rf drive, id rises from 600ma to 1920ma) ? chip dimensions: 0.57 x 2.42 x 0.10 mm (0.022 x 0.095 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint TGF2021-08 is a discrete 8mm phemt which operates from dc-12 ghz. the TGF2021-08 is designed using triquints proven standard 0.35um power phemt production process. the TGF2021-08 typically provides > 39 dbm of saturated output power with power gain of 11 db. the maximum power added efficiency is 59% which makes the TGF2021-08 appropriate for high efficiency applications. the TGF2021-08 is also ideally suited for point-to-point radio, high-reliability space, and military applications. the TGF2021-08 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 3.8 a 2/ | i g | gate supply current 56 ma p in input continuous wave power 34 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c C tbase c) / 10.8 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2021-08 table ii dc probe characteristics (t a = 25 q c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 2400 - ma gm transconductance - 3000 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -14 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquints 0.35um power phemt devices, rf breakdown >> dc breakdown
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 3 TGF2021-08 table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter vd = 10v idq = 600ma vd = 12v idq = 600ma units power tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 39.8 50 11 3.33 3.705 0.920 e 176.3 40.5 48 11 3.99 3.811 0.920 e 175.4 dbm % db w pf - efficiency tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 39 59 11.5 6.13 4.308 0.937 e 173.8 39.7 55 11 6.95 4.042 0.935 e 173.2 dbm % db w pf - table iv thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 600 ma pdiss = 7.2 w 148 10.8 1.2 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. 1/ values in this table are scaled from measurements taken from a 1mm unit phemt cell at 10 ghz 2/ large signal equivalent phemt output network 3/ optimum load impedance for maximum power or maximum pae at 10 ghz 4 the reflection coefficients for this device have been calculated from the scaled large signal rp & cp. the series resistance and inductance (rd and ld) shown in the figure on page 4 is excluded
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 4 linear model for 1mm unit phemt cell TGF2021-08 drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs source source rp, cp gate source source drain upc upc = 1mm unit phemt cell 8qlws+(07fhoo 5hihuhqfh3odqh model parameter vd = 8v idq = 75ma vd = 8v idq = 100ma vd = 8v idq = 125ma vd = 10v idq = 75ma vd = 10v idq = 100ma vd = 12v idq = 75ma units rg 0.45 0.45 0.45 0.45 0.450 0.45 w rs 0.14 0.14 0.14 0.17 0.160 0.19 w rd 0.41 0.43 0.46 0.41 0.450 0.410 w gm 0.310 0.318 0.314 0.296 0.303 0.286 s cgs 2.39 2.58 2.70 2.61 2.74 2.72 pf ri 1.22 1.19 1.20 1.24 1.23 1.27 w cds 0.20 0.201 0.201 0.198 0.199 0.196 pf rds 149.1 152.3 158.8 171.8 173.7 187.9 w cgd 0.115 0.107 0.101 0.101 0.098 0.096 pf tau 6.29 6.63 6.99 7.19 7.410 7.79 ps ls 0.009 0.009 0.009 0.009 0.010 0.010 nh lg 0.089 0.089 0.089 0.089 0.089 0.089 nh ld 0.120 0.120 0.120 0.120 0.120 0.120 nh rgs 33000 33000 35100 28900 35700 24400 w rgd 349000 425000 405000 305000 366000 238000 w
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 5 TGF2021-08 linear model for 8mm phemt l - via = 0.0135 nh (9x) upc upc upc upc upc upc upc upc 116 215 314 413 512 611 710 89 gate pads (8x) drain pads (8x)
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 6 TGF2021-08 unmatched s-parameter for 8mm phemt bias conditions: vd=12v, idq=600ma note: the s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.219 -165.41 19.074 93.88 -39.703 6.63 -2.938 -175.24 1 -0.218 -172.72 13.085 86.79 -39.685 2.29 -2.874 -176.34 1.5 -0.216 -175.20 9.538 82.14 -39.733 0.41 -2.829 -176.18 2 -0.215 -176.46 6.995 78.13 -39.810 -0.81 -2.776 -175.74 2.5 -0.213 -177.22 4.997 74.41 -39.911 -1.72 -2.713 -175.22 3 -0.210 -177.75 3.340 70.85 -40.033 -2.43 -2.641 -174.70 3.5 -0.207 -178.14 1.917 67.41 -40.175 -2.98 -2.561 -174.21 4 -0.204 -178.44 0.662 64.08 -40.335 -3.39 -2.475 -173.77 4.5 -0.201 -178.69 -0.466 60.84 -40.512 -3.65 -2.384 -173.39 5 -0.197 -178.90 -1.494 57.69 -40.703 -3.77 -2.290 -173.06 5.5 -0.194 -179.08 -2.443 54.62 -40.907 -3.73 -2.196 -172.80 6 -0.190 -179.25 -3.326 51.64 -41.121 -3.54 -2.101 -172.60 6.5 -0.187 -179.39 -4.154 48.74 -41.344 -3.19 -2.007 -172.45 7 -0.183 -179.53 -4.935 45.92 -41.574 -2.67 -1.914 -172.36 7.5 -0.179 -179.66 -5.676 43.18 -41.807 -1.99 -1.824 -172.31 8 -0.175 -179.78 -6.382 40.52 -42.041 -1.13 -1.737 -172.31 8.5 -0.172 -179.89 -7.055 37.94 -42.275 -0.11 -1.653 -172.34 9 -0.168 180.00 -7.701 35.44 -42.504 1.08 -1.573 -172.40 9.5 -0.165 179.89 -8.321 33.01 -42.727 2.43 -1.497 -172.50 10 -0.162 179.79 -8.917 30.65 -42.943 3.95 -1.424 -172.62 10.5 -0.159 179.68 -9.492 28.36 -43.148 5.62 -1.354 -172.76 11 -0.155 179.58 -10.047 26.14 -43.342 7.45 -1.289 -172.92 11.5 -0.153 179.49 -10.583 23.98 -43.522 9.43 -1.226 -173.09 12 -0.150 179.39 -11.103 21.88 -43.683 11.58 -1.168 -173.28 12.5 -0.147 179.30 -11.606 19.85 -43.822 13.87 -1.112 -173.47 13 -0.144 179.20 -12.094 17.87 -43.933 16.28 -1.060 -173.68 13.5 -0.142 179.11 -12.569 15.94 -44.015 18.79 -1.010 -173.90 14 -0.139 179.02 -13.029 14.07 -44.066 21.36 -0.964 -174.12 14.5 -0.137 178.93 -13.477 12.25 -44.085 23.96 -0.920 -174.34 15 -0.135 178.84 -13.913 10.48 -44.074 26.55 -0.878 -174.57 15.5 -0.133 178.75 -14.338 8.75 -44.033 29.12 -0.839 -174.80 16 -0.131 178.66 -14.752 7.06 -43.965 31.64 -0.803 -175.03 16.5 -0.129 178.58 -15.156 5.42 -43.871 34.10 -0.768 -175.26 17 -0.128 178.49 -15.551 3.81 -43.755 36.47 -0.735 -175.49 17.5 -0.126 178.40 -15.936 2.25 -43.619 38.75 -0.704 -175.73 18 -0.124 178.32 -16.314 0.72 -43.465 40.93 -0.674 -175.96 18.5 -0.123 178.23 -16.683 -0.78 -43.296 43.00 -0.647 -176.19 19 -0.122 178.15 -17.044 -2.24 -43.114 44.96 -0.620 -176.42 19.5 -0.120 178.06 -17.398 -3.67 -42.922 46.81 -0.595 -176.65 20 -0.119 177.98 -17.746 -5.08 -42.721 48.56 -0.572 -176.88 20.5 -0.118 177.90 -18.087 -6.45 -42.512 50.19 -0.549 -177.10 21 -0.117 177.82 -18.422 -7.80 -42.299 51.72 -0.528 -177.33 21.5 -0.116 177.73 -18.751 -9.12 -42.082 53.15 -0.508 -177.55 22 -0.115 177.65 -19.076 -10.41 -41.862 54.48 -0.489 -177.77 22.5 -0.114 177.57 -19.395 -11.69 -41.640 55.71 -0.470 -177.99 23 -0.113 177.49 -19.709 -12.94 -41.418 56.86 -0.453 -178.20 23.5 -0.112 177.41 -20.020 -14.17 -41.196 57.91 -0.436 -178.42 24 -0.111 177.33 -20.326 -15.38 -40.975 58.88 -0.421 -178.63 24.5 -0.110 177.25 -20.628 -16.57 -40.755 59.77 -0.406 -178.84 25 -0.110 177.17 -20.927 -17.74 -40.539 60.58 -0.391 -179.05 25.5 -0.109 177.09 -21.222 -18.90 -40.327 61.31 -0.377 -179.25 26 -0.109 177.01 -21.515 -20.04 -40.121 61.98 -0.364 -179.46
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2021-08 >@ >@ >@ >@ > @ > @ >@ >@ >@ > @ > @ > @ > @ > @ > @ 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdgv *dwh [ [ %rqgsdgv 'udlq [ [ %rqgsdg 9j
[ [ %rqgsdg 9j
[ [
1rwh %rqgsdgv duhdowhuqdwhjdwhsdgv wkdwfdqehxvhgirusdudooholqj)(7v '5$,1 *$7( >@ >@ >@ >@ >@
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 8 reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 se c an alloy station or conveyor furnace with reducing atmosphere should be used. do not use flux coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes TGF2021-08
|
